Datasheet Details
| Part number | STB100NH02L |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 458.43 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet | STB100NH02L_STMicroelectronics.pdf |
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Overview: www.DataSheet4U.com N-CHANNEL 24V - 0.0052 Ω - 60A D²PAK STripFET™ III POWER MOSFET TYPE STB100NH02L s s s s s s s STB100NH02L VDSS 24 V RDS(on) < 0.006 Ω ID 60 A (2) TYPICAL RDS(on) = 0.0052 Ω @ 10 V TYPICAL RDS(on) = 0.
| Part number | STB100NH02L |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 458.43 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet | STB100NH02L_STMicroelectronics.pdf |
|
|
|
The STB100NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology.
This is suitable fot the most demanding DC-DC converter applications where high efficiency is to be achieved.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Vspike(1) VDS VDGR VGS ID(2) ID(2) IDM(3) Ptot EAS (4) Tstg Tj Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max.
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