Datasheet4U Logo Datasheet4U.com

STB10NK60Z - N-CHANNEL POWER MOSFET

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • Type STB10NK60Z-1 STB10NK60Z STP10NK60Z STP10NK60ZFP STW10NK60Z.
  • VDSS @T jMax 650V 650V 650V 650V 650V RDS(on).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STB10N03 N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
STB10N60M2 N-CHANNEL POWER MOSFET STMicroelectronics
STB10N65K3 N-channel Power MOSFET STMicroelectronics
STB10N95K5 N-channel Power MOSFET STMicroelectronics
STB100N10F7 N-channel Power MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STB10NK60Z-1 N-CHANNEL POWER MOSFET
STB10NA40 N-CHANNEL POWER MOSFET
STB10NB20 N-CHANNEL POWER MOSFET
STB10NB50 N-CHANNEL POWER MOSFET
STB10NC50-1 N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STB10NK60Z/-1- STP10NK60Z STP10NK60ZFP - STW10NK60Z N-channel 600V - 0.65Ω - 10A - I2/D2PAK - TO-220/FP - TO-247 Zener-protected SuperMESH™ Power MOSFET General features Type STB10NK60Z-1 STB10NK60Z STP10NK60Z STP10NK60ZFP STW10NK60Z ■ ■ ■ ■ VDSS @T jMax 650V 650V 650V 650V 650V RDS(on) <0.75Ω <0.75Ω <0.75Ω <0.75Ω <0.75Ω ID 10A 10A 10A 10A 10A Pw 115W 115W 115W 35W 156W 3 1 2 1 2 3 12 TO-247 3 1 TO-262 TO-263 3 Extremely high dv/dt capability 100% Avalanche tested Gate charge minimized Very good manufacturing repeability TO-220FP TO-220 Description The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.