STB11NM80 Overview
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the pany's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt and excellent avalanche characteristics. Utilizing ST's proprietary strip technique, these Power MOSFETs boast an overall dynamic performance which is superior to...
STB11NM80 Key Features
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)-Qg in the industry