Datasheet Summary
STB11NM80, STF11NM80 STI11NM80, STP11NM80, STW11NM80
N-channel 800 V, 0.35 Ω, 11 A MDmesh™ Power MOSFET in D²PAK, TO-220FP, I²PAK, TO-220, TO-247
Features
Order codes VDSS
RDS(on) max
RDS(on)- Qg
STB11NM80 STF11NM80 STI11NM80 800 V STP11NM80 STW11NM80
< 0.40 Ω
14Ω- nC
11 A
- Low input capacitance and gate charge
- Low gate input resistance
- Best RDS(on)- Qg in the industry
Applications
- Switching applications
Description
These N-channel Power MOSFETs are developed using STMicroelectronics' revolutionary MDmesh™ technology, which associates the multiple drain process with the pany's PowerMESH™ horizontal layout. These devices offer extremely low on-resistance, high dv/dt...