STB12NK80Z-S
features
Type
VDSS
STB12NK80Z-S 800V
RDS(on) <0.75Ω
ID Pw 10.5A 190W t(s)- Extremely high dv/dt capability c- 100% avalanche tested du- Gate charge minimized ro- Very low intrinsic capacitances lete P ct(s)Description o du The Super MESH™ series is obtained through an bs roextreme optimization of ST’s well established strip-based Power MESH™ layout. In addition to
O Ppushing on-resistance significantly down, special
- tecare is taken to ensure a very good dv/dt t(s) lecapability for the most demanding applications. o Such series plements ST full range of high c svoltage MOSFETs including revolutionary u b MDmesh™ products.
I2SPAK
Internal schematic diagram te Prod t(s)
- OApplications le uc- Switching application
Obso te Prod Order codes ole Sales type
Obs STB12NK80Z-S
Marking B12NK80Z-S
Package I2SPAK
Packaging Tube
July 2006
Rev...
