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STB12NK80Z-S - N-CHANNEL MOSFET

General Description

strip-based PowerMESH™ layout.

O Ppushing on-resistance significantly down, special - tecare is taken to ensure a very good dv/dt t(s) lecapability for the most demanding applications.

Key Features

  • Type VDSS STB12NK80Z-S 800V RDS(on).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB12NK80Z-S N-channel 800V - 0.65Ω - 10.5A I2SPAK Zener-protected superMESH™ Power MOSFET General features Type VDSS STB12NK80Z-S 800V RDS(on) <0.75Ω ID Pw 10.5A 190W t(s)■ Extremely high dv/dt capability c■ 100% avalanche tested du■ Gate charge minimized ro■ Very low intrinsic capacitances lete P ct(s)Description o duThe SuperMESH™ series is obtained through an bs roextreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to O Ppushing on-resistance significantly down, special - tecare is taken to ensure a very good dv/dt t(s) lecapability for the most demanding applications. oSuch series complements ST full range of high c svoltage MOSFETs including revolutionary u bMDmesh™ products.