STB12NK80Z
Features
Type
VDSS (@Tjmax)
RDS(on)
STB12NK80Z STF12NK80Z STP12NK80Z STW12NK80Z
800V 800V 800V 800V
<0.75Ω 10.5 A 190W <0.75Ω 10.5 A 40W <0.75Ω 10.5 A 190W <0.75Ω 10.5 A 190W
- Extremely high dv/dt capability
- Improved esd capability
- 100% avalanche tested
- Gate charge minimized
- Very low intrinsic capacitances
- Very good manufacturing reliability
Applications
- Switching applications
3 1
D2PAK
3 2 1
TO-220FP
3 2 1
TO-220
TO-247
Figure 1. Internal schematic diagram
D(2,TAB)
Description
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' Super MESH™ technology, achieved through optimization of ST's well established strip-based Power MESH™ layout. In addition to a significant reduction in...
