STB13005-1 Description
The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Internal schematic diagram Table.
STB13005-1 Key Features
- Low spread of dynamic parameters
- Minimum lot-to-lot spread for reliable operation
- Very high switching speed
- Through hole TO-262 (I2PAK) power package
STB13005-1 Applications
- Electronic ballast for fluorescent lighting