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STB13005 - HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS

General Description

The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability.

It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA.

Figure 1.

Key Features

  • Low spread of dynamic parameters.
  • Minimum lot-to-lot spread for reliable operation.
  • Very high switching speed.
  • Through hole TO-262 (I2PAK) power package in tube (suffix “-1”).

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STB13005 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Through hole TO-262 (I2PAK) power package in tube (suffix “-1”) Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. 123 I2PAK Figure 1. Internal schematic diagram Table 1. Device summary Order code Marking (1) Package Packaging STB13005-1 B13005A B13005B I2PAK Tube 1.