STB130NH02L Datasheet | STMicroelectronics

res TYPE STB130NH02L STP130NH02L - - - - - - - STB130NH02L STP130NH02L Figure 1:Package RDS(on) < 0.0044 Ω < 0.0044 Ω ID 90 A(2) 90 A(2) VDSS 24 V 24 V TYPICAL RDS(on) = 0.0034 Ω @ 10 V TYPICAL RDS(on) = 0.005 Ω @ 5 V RDS(ON) - Qg INDUSTRY’s BENCHMARK CONDUCTION LOSSES REDUCED SWITCHING LOSSES REDUCED LOW THRESHOLD DEVICE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”) 3 1 3 1 2 D2PAK TO-263 (Suffix “T4”) TO-220 DESCRIPTION The STB_P130NH02L utilizes the latest advanced design rules of ST’s proprietary STrip FET™ technology. It is ideal in high performance DC-DC converter applications where efficiency is to be achieved at very high output currents. Figure 2: Internal Schematic Diagram APPLICATIONS - SYNCHRONOUS RECTIFICATIONS FOR TELE AND PUTER - OR-ING DIODE Table 2: Ordering Information SALES TYPE STB130NH02LT4 STP130NH02L MARKING B130NH02L P130NH02L PACKAGE TO-263 TO-220 PACKAGING TAPE & REEL TUBE ABSOLUTE MAXIMUM RATINGS Symbol Vspike(1) VDS VDGR VGS ID(2) ID(2) IDM(3) Ptot EAS (4) Tstg Tj April 2005 Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 30 24 24 ± 20 90 90 360 150 1 900 -55 to 175 Unit V V V V A A A W W/°C m J °C 1/13 Rev. 2.0 STB130NH02L STP130NH02L Table 4: THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1.0 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE...