STB135N10 Description
This MOSFET is the result of STMicroelectronics’s well established and consolidated STripFET technology utilizing the most recent layout optimization. The device exhibits extremely low on-resistance, gate charge and diode’s reverse recovery charge Qrr making it the ideal switch in a very large spectrum of applications such as Automotive, Consumer, Tele and Industrial. (3) Starting T j = 25 oC, ID = 40A, VDD = 50V...