STB135N10 Datasheet | STMicroelectronics

SFET is the result of STMicroelectronics’s well established and consolidated STrip FET technology utilizing the most recent layout optimization. The device exhibits extremely low on-resistance, gate charge and diode’s reverse recovery charge Qrr making it the ideal switch in a very large spectrum of applications such as Automotive, Consumer, Tele and Industrial. INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s PRIMARY SWITCH IN TELE DC-DC CONVERTER s HIGH-EFFICIENCY DC-DC CONVERTERS s 42V AUTOMOTIVE APPLICATIONS s SYNCHRONOUS RECTIFICATION s DIESEL INJECTION s PWM UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(- ) ID IDM(1) Ptot dv/dt (2) EAS (3) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ± 20 135 96 540 150 1 TBD TBD -55 to 175 (2) ISD ≤ 40A, di/dt ≤ 600A/µs, VDD ≤BVDSS, T j ≤ TJMAX. (3) Starting T j = 25 o C, ID = 40A, VDD = 50V Unit V V V A A A W W/°C V/ns m J °C (1) Pulse width limited by safe operating area. (- ) Value limited by wire bonding July 2003 This is preliminary information on a new product forseen to be developped. Details are subject to change without notice 1/8 STB135N10 STP135N10 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 20V Min. 100 1 10 ±100 Typ. Max....