STB14NF10 Datasheet | STMicroelectronics

DESCRIPTION This MOSFET series realized with STMicroelectronics INTERNAL SCHEMATIC DIAGRAM unique STrip FET™ process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high.. efficiency, high-frequency isolated DC-DC converters for Tele and puter applications. It is also intended for any applications with low gate drive requirements. APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol Parameter STB14NF10 STP14NF10 VDS VDGR VGS ID ID IDM(- ) Ptot dv/dt (1) EAS (2) VISO Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Operating Junction Temperature ------55 to 175 (1) ISD ≤14A, di/dt ≤300A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting T j = 25 o C, ID = 15A, VDD= 50V Value STP14NF10FP 100 100 ± 20 15 10 60 60 0.4 9 70 2000 10 6.3 40 25 0.17 Unit V V V A A A W W/°C V/ns m J V °C (- ) Pulse width limited by safe operating area. June 2002 . 1/11 STB14NF10 STP14NF10 STP14NF10FP THERMAL DATA D2PAK TO-220 Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 2.5 62.5 300 TO-220FP 6 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 20 V Min. 100 1 10 ±100 Typ. Max. Unit V µA µA n A IGSS ON (- ) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance...