STB16NS25 Datasheet | STMicroelectronics

ION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the pany’s proprietary edge termination structure, makes it suitable in coverters for lighting applications. D2PAK INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELE, INDUSTRIAL, AND LIGHTING EQUIPMENT s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tstg Tj February 2003 Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 250 250 ± 20 16 11 64 140 1 5 - 65 to 175 175 (1) ISD≤ 16A, di/dt≤300 A/µs, VDD≤ V(BR)DSS, Tj≤Tj MAX Unit V V V A A A W W/°C V/ns °C °C 1/9 (- )Pulse width limited by safe operating area THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 0.9 62.5 300 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 28 V) Max Value 16 200 Unit A m J ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20 V Min. 250 1 50 ±100 Typ. Max. Unit V µA µA n A ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On...