STB18N20 datasheet by STMicroelectronics.
| Part number | STB18N20 |
|---|---|
| Datasheet | STB18N20_STMicroelectronics.pdf |
| File Size | 148.15 KB |
| Manufacturer | STMicroelectronics |
| Description | N-CHANNEL Power MOSFET |
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Un it V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 o C Gate-body Leakage Current (V DS = 0) V GS = ± 20 V ON (∗) Symb ol V GS(th) R DS( on) ID(o n) Parameter Gate T hreshold Voltage V DS = VGS Static Drain-source On Resistance On State Drain Current V GS = 10 V Test Cond ition s ID = 250 µ A ID = 9 A 18 Min. 4 0.18 Un it V Ω A V DS > I D(on) x R DS(on) max...
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