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STB19NB20-1 - N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET

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Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.

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Datasheet Details

Part number STB19NB20-1
Manufacturer STMicroelectronics
File Size 447.52 KB
Description N-CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
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www.DataSheet4U.com N-CHANNEL 200V - 0.15Ω - 19A - TO-220/TO-220FP/I2PAK PowerMESH™ MOSFET TYPE STP19NB20 STP19NB20FP STB19NB20-1 s s s s s STP19NB20 - STP19NB20FP STB19NB20-1 VDSS 200 V 200 V 200 V RDS(on) < 0.18 Ω < 0.18 Ω < 0.18 Ω ID 19 A 10 A 19 A 3 1 2 TYPICAL RDS(on) = 0.15 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED TO-220 TO-220FP DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
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