STB20PF75 Datasheet | STMicroelectronics

Power MOSFET is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS - MOTOR CONTROL - DC-DC & DC-AC CONVERTERS D2PAK TO-263 (Suffix “T4”) ADD SUFFIX “T4” FOR ORDERING IN TAPE & REEL INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(- ) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 75 75 ± 20 20 14 80 80 0.53 10 350 -55 to 175 Unit V V V A A A W W/°C V/ns m J °C (- ) Pulse width limited by safe operating area (1) ISD ≤20A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (2) Starting Tj = 25 o C, ID = 10 A, VDD = 30V Note: For the P-CHANNEL MOSFET actual polarity of voltages and current has to be reversed March 2004 1/9 Data Sheet 4 U . .. THERMAL DATA Rthj-case Rthj-PCB Tl Thermal Resistance Junction-case Thermal Resistance Junction-PCB Maximum Lead Temperature For Soldering Purpose (1.6 mm from case, for 10 sec) Max Max Typ 1.88 34 300 °C/W °C/W °C (- ) When Mounted on 1 inch2 FR-4 board, 2 oz of Cu ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 20 V Min. 75 1 10 ±100 Typ. Max. Unit V µA µA n A IGSS ON (- ) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static...