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STB22NE03L
N - CHANNEL 30V - 0.034Ω - 22A TO-263 STripFET™ POWER MOSFET
PRELIMINARY DATA
TYPE STB22NE03L
s s s s s
V DSS 30 V
R DS(on) <0.05 Ω
ID 22 A
s
TYPICAL RDS(on) = 0.034 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC APPLICATION ORIENTED CHARACTERIZATION ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL
3 1
DESCRIPTION This Power MOSFET is the latest development of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.