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STB25NM50N-1 - N-CHANNEL POWER MOSFET

Download the STB25NM50N-1 datasheet PDF (STB25NM50N included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for n-channel power mosfet.

Description

The STx25NM50N is realized with the second generation of MDmesh Technology.

This revolutionary MOSFET associates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge.

Features

  • TYPE STB25NM50N-1 STF25NM50N STP25NM50N STW25NM50N STB25NM50N.
  • Figure 1: Package ID 22 A 22 A(.
  • ) 22 A 22 A 22 A RDS(on) 0.140 0.140 0.140 0.140 0.140 Ω Ω Ω Ω Ω VDSS (@TjMAX) 550V 550V 550V 550V 550V 3 1 2 3 12 TO-220 3 1 I²PAK.
  • HIGH dv/dt AND.

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Note: The manufacturer provides a single datasheet file (STB25NM50N_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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www.DataSheet4U.com STP25NM50N - STF25NM50N STB25NM50N/-1 - STW25NM50N N-CHANNEL 500V 0.11 Ω - 22 A TO-220/FP/D²/I²PAK/TO-247 SECOND GENERATION MDmesh™ MOSFET Table 1: General Features TYPE STB25NM50N-1 STF25NM50N STP25NM50N STW25NM50N STB25NM50N ■ ■ ■ Figure 1: Package ID 22 A 22 A(*) 22 A 22 A 22 A RDS(on) 0.140 0.140 0.140 0.140 0.140 Ω Ω Ω Ω Ω VDSS (@TjMAX) 550V 550V 550V 550V 550V 3 1 2 3 12 TO-220 3 1 I²PAK ■ HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TO-247 D²PAK 3 2 1 3 1 2 DESCRIPTION The STx25NM50N is realized with the second generation of MDmesh Technology.
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