STB270N04 Datasheet | STMicroelectronics

features Type STB270N04-1 STB270N04 STP270N04 - - VDSS 40V 40V 40V RDS(on) <2.9mΩ <2.5mΩ <2.9mΩ ID 120A 160A 120A PTOT 330W 330W 330W TO-220 1 2 3 3 12 I²PAK 100% avalanche tested Standard threshold drive 1 3 Description This N-Channel enhancement mode MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and low gate charge. D²PAK Internal schematic diagram Applications - - High current, switching application Automotive Order codes Sales Type STB270N04-1 STB270N04 STP270N04 Marking B270N04 B270N04 P270N04 Package I²PAK D²PAK TO-220 Packaging TUBE TAPE & REEL TUBE February 2006 Rev3 1/14 .st. 14 Data Sheet 4 U . .. Electrical ratings STB270N04-1 - STB270N04 - STP270N04 Electrical ratings Table 1. Symbol VDS VGS ID(1) ID(1) IDM (2) Absolute maximum ratings Value Parameter TO-220/I²PAK Drain-Source Voltage (V GS = 0) Gate-Source Voltage Drain Current (continuous) at T C = 25°C Drain Current (continuous) at T C=100°C Drain Current (pulsed) Total Dissipation at T C = 25°C Derating Factor 120 120 480 330 2.2 3.5 1 -55 to 175 40 ± 20 160 160 640 D²PAK V V A A A W W/°C V/ns J °C Unit PTOT dv/dt(3) EAS(4) TJ...