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STB28NM50N - N-Channel Power MOSFET

General Description

These devices are made using the second generation of MDmeshTM technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type STB28NM50N STF28NM50N STP28NM50N STW28NM50N.
  • VDSS (@Tjmax) RDS(on) max ID 3 1 2 3 1 2 TO-220FP 550 V < 0.158 Ω 21 A TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3 1 2 3 D²PAK TO-247.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com STB28NM50N, STF28NM50N STP28NM50N, STW28NM50N N-channel 500 V, 0.135 Ω, 21 A D2PAK, TO-220, TO-220FP, TO-247 MDmesh™ II Power MOSFET Features Type STB28NM50N STF28NM50N STP28NM50N STW28NM50N ■ ■ ■ VDSS (@Tjmax) RDS(on) max ID 3 1 2 3 1 2 TO-220FP 550 V < 0.158 Ω 21 A TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance 1 3 1 2 3 D²PAK TO-247 Application Switching applications Figure 1. Internal schematic diagram Description These devices are made using the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.