Datasheet4U Logo Datasheet4U.com

STB300NH02L - N-CHANNEL Power MOSFET

General Description

This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology.

This is suitable for high current OR-ing application.

Switching application Specifically designed and optimized for high efficiency DC/DC conver

Key Features

  • Type STB300NH02L STP300NH02L.
  • VDSS 24V 24V RDS(on) < 1.8mΩ < 2.2mΩ ID 120A 120A 3 1 RDS(on).
  • Qg industry’s benchmark Conduction losses reduced Switching losses reduced Low profile, very low parasitic inductance TO-220 1 2 3 D²PAK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STB30120C SCHOTTKY RECTIFIER SMC Diode
STB30150C SCHOTTKY RECTIFIER SMC Diode
STB3055L2 MOSFET SamHop
STB30N65DM6AG Automotive-grade N-channel Power MOSFET STMicroelectronics
STB30N65M2AG N-channel Power MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STB3015L N-CHANNEL Power MOSFET
STB3020L N-CHANNEL Power MOSFET
STB30N10 N-CHANNEL Power MOSFET
STB30NE06L N-CHANNEL Power MOSFET
STB30NF10 N-CHANNEL Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STB300NH02L STP300NH02L N-channel 24V - 120A - TO-220 / D2PAK STripFET™ Power MOSFET PRELIMINARY DATA General features Type STB300NH02L STP300NH02L ■ ■ ■ ■ VDSS 24V 24V RDS(on) < 1.8mΩ < 2.2mΩ ID 120A 120A 3 1 RDS(on)*Qg industry’s benchmark Conduction losses reduced Switching losses reduced Low profile, very low parasitic inductance TO-220 1 2 3 D²PAK Description This product utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for high current OR-ing application.