STB30N10 datasheet by STMicroelectronics.
| Part number | STB30N10 |
|---|---|
| Datasheet | STB30N10_STMicroelectronics.pdf |
| File Size | 83.06 KB |
| Manufacturer | STMicroelectronics |
| Description | N-CHANNEL Power MOSFET |
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Details are subject to change without notice. Unit V µA µA nA VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20 V ON ( ) Symbol VGS(th) RDS(on) ID(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance On State Drain Current Test Conditions VDS = VGS VGS = 10 V ID = 250 µA ID = 15 A 30 Min. 4 0.07 Unit V Ω A VDS > ID(on) x RDS(on)max VGS = 10 V DYNAMIC Symbol gfs ( ) Parameter Forward...
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