STB30N10 Datasheet | STMicroelectronics

N-CHANNEL 100V - 0.06 Ω - 30A D2PAK POWER MOSFET TRANSISTOR TYPE STB30N10 s s s s s s s PRELIMINARY DATA VDSS 100 V RDS(on) <0.07 Ω ID 30 A s TYPICAL RDS(on) = 0.06 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o C LOW GATE CHARGE VERY HIGH CURRENT CAPABILITY APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4") 3 1 D2PAK TO-263 (suffix“T4”) APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SOLENOID AND RELAY DRIVERS s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMP DRIVERS, etc.) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(- ) Ptot Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 100 100 ±20 30 21 120 150 1 - 65 to 175 175 Unit V V V A A A W W/°C °C °C (- )Pulse width limited by safe operating area (1)ISD [ 22 A, di/dt m 300A/ms, VDD [ V(BR)DSS, Tj [ T JMA November 2000 This is preliminary data new product in development or undergoing evaluation. Details are subject to change without notice. 1/6 THERMAL DATA Rthj-case Rthj-amb Rthc-sink Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Max Max Max 1 62.5 0.5 °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA VGS = 0 Min. 100 10 10 ±100 Typ. Max. Unit V µA µA n A VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 20 V ON (- ) Symbol...