STB30NS15 Datasheet | STMicroelectronics

This MOSFET series realized with STMicroelectronics unique STrip FET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Tele and puter applications. It is also intended for any applications with low gate drive requirements. D2PAK TO-263 (Suffix “T4”) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s HIGH-EFFICIENCY DC-DC CONVERTERS s UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(- ) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 150 150 ± 20 30 21 120 110 0.73 2 250 -55 to 175 Unit V V V A A A W W/°C V/ns m J °C - ) Pulse width limited by safe operating area. October 2001 (1) ISD ≤ 30A, di/dt ≤ 100A/µs, VDD ≤ V (BR)DSS, Tj ≤ TJMAX. (2) Starting T j = 25 o C, ID = 15A, VDD = 25V 1/9 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max 1.36 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 20V Min. 150 1 10 ±100 Typ. Max. Unit V µA µA n A ON (- ) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V ID = 250 µA ID = 15 A Min. 2 Typ. 3 0.075 Max. 4 0.1 Unit V Ω DYNAMIC Symbol gfs (-...