STB3NA80 datasheet by STMicroelectronics.
| Part number | STB3NA80 |
|---|---|
| Datasheet | STB3NA80_STMicroelectronics.pdf |
| File Size | 241.11 KB |
| Manufacturer | STMicroelectronics |
| Description | N-CHANNEL Power MOSFET |
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Unit V µA µA nA Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating x 0.8 Gate-body Leakage Current (V DS = 0) V GS = ± 30 V T c = 125 o C ON (∗) Symbol V GS(th) R DS(on) ID(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance Test Conditions ID = 250 µ A T c = 100 o C 3.1 Min. 3 730 85 20 950 115 30 Max.
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