STB3NA80
STB3NA80 is N-CHANNEL Power MOSFET manufactured by STMicroelectronics.
- CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
TYPE STB3NA80 s s s s s s s s
V DSS 800 V
R DS(on) < 4.5 Ω
ID 3.1 A s
TYPICAL RDS(on) = 3.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100o C LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED REDUCED THRESHOLD VOLTAGE SPREAD THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE-MOUNTING D2PACK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")
3 12
3 1
I2PAK TO-262
D2PAK TO-263
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (
- ) P tot T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max. Operating Junction Temperature o o
Value 800 800 ± 30 3.1 2 12.5 100 1.25 -65 to 150 150
Unit V V V A A A W W/ o C o o
(- ) Pulse width limited by safe operating area
October 1995
1/10
THERMAL DATA
R thj-case R thj-amb R thc-sink Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.8 62.5 0.5 300 o o
C/W C/W o C/W o C
AVALANCHE CHARACTERISTICS
Symbol I AR E AS E AR I AR Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max, δ < 1%) Single Pulse Avalanche Energy (starting T j = 25 o C, ID = I AR , V DD = 50 V) Repetitive Avalanche Energy (pulse width limited by T j max, δ < 1%) Avalanche Current, Repetitive or Not-Repetitive (T c = 100 o C, pulse width limited by T j max, δ < 1%) Max Value 3.1 48 2 2 Unit A m J m J...
