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STB3NB60
N - CHANNEL 600V - 3.3Ω - 3.3A - D2PAK/I2PAK PowerMESH™ MOSFET
TYPE STB3NB60
s s s s s
V DSS 600 V
R DS(on) <3.6 Ω
ID 3.3 A
TYPICAL RDS(on) = 3.3 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3 1
D2PAK TO-263
(Suffix ”T4”)
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STB3NB60 Datasheet
