Datasheet Details
| Part number | STB3NB60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 90.55 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STB3NB60_STMicroelectronics.pdf |
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Overview: ® STB3NB60 N - CHANNEL 600V - 3.3Ω - 3.3A - D2PAK/I2PAK PowerMESH™ MOSFET TYPE STB3NB60 s s s s s V DSS 600 V R DS(on) <3.6 Ω ID 3.3 A TYPICAL RDS(on) = 3.
| Part number | STB3NB60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 90.55 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STB3NB60_STMicroelectronics.pdf |
|
|
|
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P t ot dv/dt( 1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max.
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