STB3NC90Z Datasheet | STMicroelectronics

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, PUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (- ) Gate source ESD(HBM-C=100p F, R=15KΩ) Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature Value 900 900 ± 25 3.5 2.2 14 100 0.8 ±50 2.5 3 - 65 to 150 150 (1)ISD ≤3.5A, di/dt ≤100A/µs, V DD ≤ V(BR)DSS, Tj ≤ TJMAX (- ).Limited only by maximum temperature allowed Unit V V V A A A W W/°C m A KV V/ns °C °C (- )Pulse width limited by safe operating area May 2001 1/9 THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1.25 62 300 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 3.5 220 Unit A m J ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS Parameter Drain-source Breakdown Voltage Test Conditions ID = 250 µA, VGS = 0 ID = 1 m A, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ±20V Min. 900 1 1 50 ±10 Typ. Max. Unit V V/°C µA µA µA ∆BVDSS/∆TJ Breakdown Voltage Temp. Coefficient IDSS IGSS Zero Gate...