STB45NF3LL Datasheet | STMicroelectronics

application specific Power MOSFET is the third genaration of STMicroelectronics unique “Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance ang gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTERS ABSOLUTE MAXIMUM RATINGS Symbol Parameter TO-220FP INTERNAL SCHEMATIC DIAGRAM Value TO-220/D2PAK TO-220FP 30 30 ± 16 45 32 180 70 0.46 241 -- 55 to 175 (1) Starting Tj= 25°C, ID= 22.5A, VDD= 24V Unit VDS VDGR VGS ID ID IDM ( ) PTOT EAS (1) Viso Tstg Tj Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Insulation Withstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature V V V 27 19 108 25 0.167 2500 A A A W W/°C m J V °C 1/11 (q ) Pulse width limited by safe operating area November 2002 STP45NF3LL - STB45NF3LL THERMAL DATA TO-220 D2PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 2.14 62.5 300 TO-220FP 6 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS IDSS IGSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA, VGS = 0 VDS = Max Rating VDS = Max Rating, TC = 125 °C VGS = ± 16 V Min. 30 1 10 ±100 Typ. Max. Unit V µA µA n A ON (1) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions...