Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.
Features
- TAB
3 1
D²PAK
TAB
3 1
DPAK
Figure 1. Internal schematic diagram
D(2,TAB)
Order codes STB4N62K3 STD4N62K3
VDS RDS(on) max. ID
620 V
2Ω
3.8 A
PW 70 W.
- 100% avalanche tested.
- Extremely high dv/dt capability.
- Gate charge minimized.
- Very low intrinsic capacitance.
- Improved diode reverse recovery
characteristics.
- Zener-protected.
STB4N62K3 Datasheet
