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STB4N62K3 Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STB4N62K3, STD4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3™ Power MOSFETs in D²PAK and DPAK packages Datasheet - production.

General Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, bined with a new optimized vertical structure.

These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.

Order code STB4N62K3 STD4N62K3 Table 1.

Key Features

  • TAB 3 1 D²PAK TAB 3 1 DPAK Figure 1. Internal schematic diagram D(2,TAB) Order codes STB4N62K3 STD4N62K3 VDS RDS(on) max. ID 620 V 2Ω 3.8 A PW 70 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Gate charge minimized.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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