STB4N62K3 Datasheet | STMicroelectronics

ures 3 1 D²PAK 3 1 DPAK Figure 1. Internal schematic diagram D(2,TAB) Order codes STB4N62K3 STD4N62K3 VDS RDS(on) max. ID 620 V 2Ω 3.8 A PW 70 W - 100% avalanche tested - Extremely high dv/dt capability - Gate charge minimized - Very low intrinsic capacitance - Improved diode reverse recovery characteristics - Zener-protected Applications - Switching applications G(1) S(3) AM01476v1 Description These Super MESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ Super MESH™ technology, bined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications. Order code STB4N62K3 STD4N62K3 Table 1. Device summary Marking Packages 4N62K3...