STB4N62K3 - N-Channel Power MOSFET

Product Overview

ST Microelectronics

Datasheet Details

Part number	STB4N62K3
Manufacturer	STMicroelectronics
File Size	1.21 MB
Description	N-Channel Power MOSFET
Datasheet	STB4N62K3 Datasheet
Additional preview pages of the STB4N62K3 datasheet.

Product details

Description

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure.

Features

TAB 3 1 D²PAK TAB 3 1 DPAK Figure 1. Internal schematic diagram D(2,TAB) Order codes STB4N62K3 STD4N62K3 VDS RDS(on) max. ID 620 V 2Ω 3.8 A PW 70 W.
100% avalanche tested.
Extremely high dv/dt capability.
Gate charge minimized.
Very low intrinsic capacitance.
Improved diode reverse recovery characteristics.
Zener-protected.

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Published: Jun 29, 2010 |