STB55NE06 Datasheet | STMicroelectronics

.. - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE ST B55NE06 s s s s s s V DSS 60 V R DS(on) < 0.022 Ω ID 55 A s TYPICAL RDS(on) = 0.019 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC HIGH dv/dt CAPABILITY APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique ”Single Feature Size” strip-based process. The resulting transistor shows extremely high packing density for low onINTERNAL SCHEMATIC DIAGRAM resistance, rugged avalance characteristics and . less critical alignment steps...