STB55NE06L Datasheet | STMicroelectronics

.. - CHANNEL ENHANCEMENT MODE " SINGLE FEATURE SIZE™ " POWER MOSFET PRELIMINARY DATA TYPE STB55NE06L s s s s s V DSS 60 V R DS(on) < 0.022 Ω ID 55A s TYPICAL RDS(on) = 0.018 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100 oC APPLICATION ORIENTED CHARACTERIZATION FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE 3 1 DESCRIPTION This Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™ " strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics INTERNAL SCHEMATIC DIAGRAM and less critical alignment steps therefore...