Datasheet Details
| Part number | STB5NC50-1 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 631.55 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet | STB5NC50-1 STB5NC50 Datasheet (PDF) |
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Overview: www.DataSheet4U.com STP5NC50 - STP5NC50FP STB5NC50 - STB5NC50-1 N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh™II MOSFET TYPE STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1 s s s s s VDSS 500 V 500 V 500 V 500 V RDS(on) < 1.5Ω < 1.5Ω < 1.5Ω < 1.5Ω ID 5.5A 5.5A 5.5A 5.5A 3 1 TYPICAL RDS(on) = 1.
This datasheet includes multiple variants, all published together in a single manufacturer document.
| Part number | STB5NC50-1 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 631.55 KB |
| Description | N-CHANNEL POWER MOSFET |
| Datasheet | STB5NC50-1 STB5NC50 Datasheet (PDF) |
|
|
|
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
I2PAK INTERNAL SCHEMATIC DIAGRAM DataSheet4U.com APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVES ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP5NC50 STB5NC50/-1 VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt(1) VISO Tj Tstg Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Temperature -55 to 175 -65 to 175 (*)Limited only by maximum temperature allowed DataShe e Unit STP5NC50FP V V V 5.5(*) 3.5(*) 22 35 0.28 A A A W W/°C V/ns 2500 V °C °C 500 500 ±30 5.5 3.5 22 100 0.8 3.5 (•)Pulse width limited by safe operating area (1)ISD ≤5.5A, di/dt ≤ 100A/µs, VDD ≤ V(BR)DSS, Tj ≤ T JMAX.
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