STB5NC90Z-1 Datasheet | STMicroelectronics

DESCRIPTION The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications. . APPLICATIONS s SINGLE-ENDED SMPS IN MONITORS, PUTER AND INDUSTRIAL APPLICATION s WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q ) PTOT IGS VESD(G-S) dv/dt VISO Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Gate-source Current (- ) Gate source ESD(HBM-C=100p F, R=15KΩ) Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max. Operating Junction Temperature -- I²PAK (Tabless TO-220) Data Shee Value STP(B)5NC90Z(-1) 900 900 ± 25 4.6 2.9 18 125 1 ±50 3 3 2000 - 65 to 150 150 (1)ISD ≤4.6A, di/dt ≤100A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX (- ).Limited only by maximum temperature allowed Unit STP5NC90ZFP V V V 4.6(- ) 2.9(- ) 18 40 0.32 A A A W W/°C m A KV V/ns V °C °C 1/13 (- )Pulse width limited by safe operating area December 2002 . . Data Sheet 4 U . .. STP5NC90Z - STP5NC90ZFP - STB5NC90Z - STB5NC90Z-1 THERMAL DATA TO-220 / D²PAK / I²PAK Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Maximum Lead Temperature For Soldering Purpose 1 30 300 TO-220FP 3.13 °C/W °C/W °C AVALANCHE CHARACTERISTICS Symbol IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V) Max Value 4.6 220 Unit A m J ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol V(BR)DSS ∆BVDSS/∆TJ IDSS IGSS Parameter...