| Part number | STB60NH02L |
|---|---|
| Datasheet | STB60NH02L_STMicroelectronics.pdf |
| File Size | 423.79 KB |
| Manufacturer | STMicroelectronics |
| Description | N-CHANNEL Power MOSFET |
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The STB60NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved. Unit V µA µA nA TC = 125°C ON (4) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 5 V ID = 250 µA ID = 30 A ID = 15 A Min.
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