Datasheet Details
| Part number | STB60NH02L |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 423.79 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet |
 STB60NH02L Datasheet
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| Part number | STB60NH02L |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 423.79 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet |
STB60NH02L Datasheet
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The STB60NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology.
This is suitable fot the most demanding DC-DC converter application where high efficiency is to be achieved.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY DC/DC CONVERTES Ordering Information SALES TYPE STB60NH02LT4 MARKING B60NH02L PACKAGE TO-263 PACKAGING TAPE & REEL ABSOLUTE MAXIMUM RATINGS Symbol Vspike(1) VDS VDGR VGS ID ID IDM(2) Ptot EAS (3) Tstg Tj Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max.
N-CHANNEL 24V - 0.0085 Ω - 60A D²PAK STripFET™ III POWER MOSFET TYPE STB60NH02L s s s s s s s STB60NH02L VDSS 24 V RDS(on) < 0.0105 Ω ID 60 A TYPICAL RDS(on) = 0.0085 Ω @ 10 V TYPICAL RDS(on) = 0.
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