Datasheet Details
| Part number | STB6NB50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 92.76 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STB6NB50_STMicroelectronics.pdf |
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Overview: ® STB6NB50 N - CHANNEL 500V - 1.35Ω - 5.8A - D2PAK/I2PAK PowerMESH™ MOSFET TYPE ST B6NB50 s s s s s V DSS 500 V R DS(on) < 1.5 Ω ID 5.8 A TYPICAL RDS(on) = 1.
| Part number | STB6NB50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 92.76 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STB6NB50_STMicroelectronics.pdf |
|
|
|
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE I2PAK TO-262 (suffix ”-1”) D2PAK TO-263 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1 ) Ts tg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
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