Datasheet Details
| Part number | STB6NB90 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 48.65 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STB6NB90_STMicroelectronics.pdf |
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Overview: ® STB6NB90 N - CHANNEL 900V - 1.7Ω - 5.8A - D2PAK PowerMESH™ MOSFET PRELIMINARY DATA TYPE STB6NB90 s s s s s s V DSS 900 V R DS(on) < 2.0 Ω ID 5.8 A TYPICAL RDS(on) = 1.
| Part number | STB6NB90 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 48.65 KB |
| Description | N-CHANNEL Power MOSFET |
| Datasheet | STB6NB90_STMicroelectronics.pdf |
|
|
|
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM (• ) P tot dv/dt( 1 ) Tstg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
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