INTERNAL SCHEMATIC DIAGRAM This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.
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STB80NF12 STW80NF12 STP80NF12 STP80NF12FP
N-CHANNEL 120V-0.013Ω-80A TO-220/TO-247/TO-220FP/D²PAK STripFET™ II POWER MOSFET
TYPE STB80NF12 STP80NF12 STP80NF12FP STW80NF12
s s s s
VDSS 120 V 120 V 120 V 120 V
RDS(on) <0.018 <0.018 <0.018 <0.018 Ω Ω Ω Ω 80 80 80 80
ID A(*) A(*) A(*) A(*)
TO-220
TO-220FP
3 1 2
1 2
3
s
TYPICAL RDS(on) = 0.013Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION SURFACE-MOUNTING D²PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX “T4”)
TO-247 D²PAK
TO-263
(Suffix “T4”)
3 1
DESCRIPTION
INTERNAL SCHEMATIC DIAGRAM This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge.
STB80NF12 Datasheet
