STD1HNC60 Datasheet | STMicroelectronics

N-CHANNEL 600V - 4Ω - 2A - IPAK/DPAK Power Mesh™II MOSFET TYPE STD1HNC60 s s s s s VDSS 600 V RDS(on) <5Ω ID 2A TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED IPAK TO-251 3 2 1 1 DESCRIPTION The Power MESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron- area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER s DPAK TO-252 INTERNAL SCHEMATIC...