Datasheet Details
| Part number | STD1HNC60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 268.84 KB |
| Description | N-CHANNEL POWER MOSFET |
| Download | STD1HNC60 Download (PDF) |
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Overview: N-CHANNEL 600V - 4Ω - 2A - IPAK/DPAK PowerMesh™II MOSFET TYPE STD1HNC60 s s s s s STD1HNC60 VDSS 600 V RDS(on) <5Ω ID 2A TYPICAL RDS(on) = 4 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE.
| Part number | STD1HNC60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 268.84 KB |
| Description | N-CHANNEL POWER MOSFET |
| Download | STD1HNC60 Download (PDF) |
|
|
|
The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™.
The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER s DPAK TO-252 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (1) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
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