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N-CHANNEL 600V - 12Ω - 1A - IPAK/DPAK PowerMESH™II MOSFET
TYPE STD1LNC60
s s s s s
STD1LNC60
VDSS 600 V
RDS(on) < 15 Ω
ID 1A
TYPICAL RDS(on) = 12 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED IPAK TO-251
3 2 1 1
3
DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.
STD1LNC60 Datasheet
