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STD20NE03L - N-CHANNEL MOSFET

General Description

This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process.

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STD20NE03L N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE™ ” POWER MOSFET TYPE ST D20NE03L s s s s s V DSS 30 V R DS(on ) < 0.020 Ω ID 20 A TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE A 100 oC APPLICATION ORIENTED CHARACTERIZATION 3 2 1 1 3 DESCRIPTION This Power MOSFET is the latest development of SGS-THOMSON unique ”Single Feature Size™ ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.