Datasheet4U Logo Datasheet4U.com

STD2NM60 - N-CHANNEL MOSFET

Description

The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.

The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STD2NM60/.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STD2N105K5 N-channel Power MOSFET STMicroelectronics
STD2N62K3 N-channel Power MOSFET STMicroelectronics
STD2N80K5 N-channel Power MOSFET STMicroelectronics
STD2N95K5 N-channel Power MOSFET STMicroelectronics
STD2NC45-1 N-Channel MOSFET INCHANGE

Other Datasheets by STMicroelectronics

Part Number Description
STD2N50 N-CHANNEL MOSFET
STD2NA50 N-CHANNEL MOSFET
STD2NA60 N-CHANNEL MOSFET
STD2NB25 N-CHANNEL MOSFET
STD2NB40 N-CHANNEL MOSFET

Full PDF Text Transcription

Click to expand full text
N-CHANNEL 600V - 2.8Ω - 2A DPAK/IPAK Zener-Protected MDmesh™Power MOSFET TYPE STD2NM60 STD2NM60-1 s s s s STD2NM60 STD2NM60-1 VDSS 600V 600V RDS(on) < 3.2 Ω < 3.2 Ω ID 2A 2A s s TYPICAL RDS(on) = 2.8 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TIGHT PROCESS CONTROL AND HIGH MANUFACTORING YIELDS 3 1 2 1 3 DPAK TO-252 IPAK TO-251 DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
Published: |