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®
STD2NB40
N - CHANNEL 400V - 3.5Ω - 2A - IPAK/DPAK PowerMESH™ MOSFET
PRELIMINARY DATA
TYPE STD2NB40
s s s s s s
V DSS 400 V
R DS(on) <4Ω
ID 2A
TYPICAL RDS(on) = 3.5 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX "T4" FOR ORDERING IN TAPE & REEL IPAK TO-251 (Suffix "-1")
3 2 1
1 3
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
STD2NB40 Datasheet
