Datasheet Details
| Part number | STD2NB80 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 92.22 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet | STD2NB80_STMicroelectronics.pdf |
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Overview: ® STD2NB80 N - CHANNEL 800V - 4.6 Ω - 1.9A - IPAK/DPAK PowerMESH™ MOSFET TYPE ST D2NB80 s s s s s s V DSS 800 V R DS(on) < 6.5 Ω ID 1.9 A TYPICAL RDS(on) = 4.
| Part number | STD2NB80 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 92.22 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet | STD2NB80_STMicroelectronics.pdf |
|
|
|
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE s DPAK TO-252 (Suffix ”T4”) INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor dv/dt( 1 ) Ts tg Tj Peak Diode Recovery voltage slope Storage Temperature Max.
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