Datasheet Details
| Part number | STD2NB50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 451.99 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet | STD2NB50_STMicroelectronics.pdf |
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Overview: N-CHANNEL 500V - 5Ω - 1A DPAK / IPAK PowerMesh™ MOSFET TYPE STD2NB50 STD2NB50-1 s s s s STD2NB50 STD2NB50-1 VDSS 500V 500V RDS(on) < 6Ω < 6Ω ID 1A 1A TYPICAL RDS(on) = 5 Ω 100% AVALANCHE TESTED VERY LOW INTRINSIC.
| Part number | STD2NB50 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 451.99 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet | STD2NB50_STMicroelectronics.pdf |
|
|
|
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the pany’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s SWITH MODE POWER SUPPLIES (SMPS) s LIGHTING FOR INDUSTRIAL AND CONSUMER ENVIRONMENT INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM (q) PTOT dv/dt(1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
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