Datasheet Details
| Part number | STD2NB60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 291.37 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet | STD2NB60_STMicroelectronics.pdf |
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Overview: STD2NB60 N - CHANNEL ENHANCEMENT MODE PowerMESH™ MOSFET TYPE STD2NB60 s s s s s V DSS 600 V R DS(on) < 3.6 Ω ID 2.6 A TYPICAL RDS(on) = 3.
| Part number | STD2NB60 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 291.37 KB |
| Description | N-CHANNEL MOSFET |
| Datasheet | STD2NB60_STMicroelectronics.pdf |
|
|
|
Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE IPAK TO-251 (Suffix "-1") DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P tot Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at T c = 25 C Drain Current (continuous) at T c = 100 o C Drain Current (pulsed) Total Dissipation at T c = 25 C Derating Factor dv/dt( 1 ) T stg Tj March 1998 Peak Diode Recovery voltage slope Storage Temperature Max.
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