STD5NB30 Datasheet | STMicroelectronics

.. ® - CHANNEL 300V - 0.75 Ω - 5A - DPAK PowerMESH™ MOSFET TYPE ST D5NB30 s s s s s s V DSS 300 V R DS(on) < 0.9 Ω ID 5 A TYPICAL RDS(on) = 0.75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED ADD SUFFIX ”T4” FOR ORDERING IN TAPE & REEL 3 1 DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the pany’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and...