Datasheet Details
| Part number | STD7NS20 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 301.38 KB |
| Description | N-CHANNEL MOSFET |
| Download | STD7NS20 Download (PDF) |
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Overview: www.DataSheet4U.com STD7NS20 STD7NS20-1 N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK MESH OVERLAY™ MOSFET PRELIMINARY DATA TYPE STD7NS20 STD7NS20-1 s s s s s VDSS 200 V 200 V RDS(on) < 0.40 Ω < 0.40 Ω ID 7A 7A 3 1 2 1 3 TYPICAL RDS(on) = 0.
| Part number | STD7NS20 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 301.38 KB |
| Description | N-CHANNEL MOSFET |
| Download | STD7NS20 Download (PDF) |
|
|
|
Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance.
The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-DC CONVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuos) at TC = 25°C Drain Current (continuos) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max.
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