STD888 Description
The device is manufactured in low voltage PNP Planar Technology by using a "Base Island" layout. The resulting Transistor shows exceptional high gain performance coupled with very low saturation voltage. DPAK TO-252 (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM RATINGS Symbol V CBO V CEO V EBO IC I CM P tot T stg Tj March 2003 Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base...