Datasheet Details
| Part number | STD888 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.37 KB |
| Description | PNP Transistor |
| Datasheet | STD888-INCHANGE.pdf |
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Overview: isc Silicon PNP Power Transistor STD888.
| Part number | STD888 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 213.37 KB |
| Description | PNP Transistor |
| Datasheet | STD888-INCHANGE.pdf |
|
|
|
·Low Collector-Emitter Saturation Voltage- : VCE(sat)= -0.7V(Max)( IC= -5A;
IB= -0.25A) ·DC Current Gain -hFE = 150(Min)@ IC= -0.5A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power amplifier applications ·Voltage regulation in bias supply circuits applications ·Switching regulator inbattery charger applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -5 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ -10 A 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE=-0.1mA,IC=0 V (BR)CEO) * Collector-Emitter Breakdown Voltage IC=-10mA, IB=0 V(BR)CBO Collector-Base Breakdown Voltage VCE(sat) * Collector-Emitter Saturation Voltage VBE(sat)* Base-Emitter Saturation Voltage ICBO Collector Cutoff Current IC=-0.1mA ,IE=0 IC= -0.5A;
IB= -5mA IC= -2A;
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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STD888 | HIGH CURRENT / HIGH PERFORMANCE / LOW VOLTAGE PNP TRANSISTOR | ST Microelectronics |
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STD888 | LOW VOLTAGE PNP TRANSISTOR | UTC |
|
STD888T4 | Low Voltage PNP Transistor | ST Microelectronics |
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