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STD888T4 - Low Voltage PNP Transistor

General Description

The device in manufactured in low voltage PNP Planar Technology by using a “Base Island” layout.

The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.

Power management in portable equipm

Key Features

  • Very low Collector to Emitter saturation voltage D. C. Current gain, hFE >100 5A continuous collector current Surface mounting DPAK(TO-252) power package in tape & reel packing In compliance with the 2002/93/EC European Directive 3 1 DPAK (TO-252).

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www.DataSheet4U.com STD888T4 Medium Current, High Performance, Low Voltage PNP Transistor General features ■ ■ ■ ■ Very low Collector to Emitter saturation voltage D.C. Current gain, hFE >100 5A continuous collector current Surface mounting DPAK(TO-252) power package in tape & reel packing In compliance with the 2002/93/EC European Directive 3 1 DPAK (TO-252) ■ Description The device in manufactured in low voltage PNP Planar Technology by using a “Base Island” layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage.