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STD840DN40 - Dual NPN High Voltage Transistors

General Description

The device is a dual NPN high voltage power transistors manufactured in multi-epitaxial planar technology.

It is housed in dual island DIP-8 package with separated terminals for high assembly flexibility.

Figure 1.

Key Features

  • Low VCE(sat) Simplified circuit design Reduced component count Fast switching speed 8 4 1.

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STD840DN40 Dual NPN high voltage transistors in a single package Preliminary data Features ■ ■ ■ ■ Low VCE(sat) Simplified circuit design Reduced component count Fast switching speed 8 4 1 Applications ■ ■ Compact fluorescent lamp (CFL) 220 V mains Electronic ballast for fluorescent lighting DIP-8 Description The device is a dual NPN high voltage power transistors manufactured in multi-epitaxial planar technology. It is housed in dual island DIP-8 package with separated terminals for high assembly flexibility. Figure 1. Internal schematic diagram www.DataSheet4U.com Table 1. Device summary Marking D840DN40 Package DIP-8 Packaging Tube Order code STD840DN40 November 2009 Doc ID 16796 Rev 1 1/9 www.st.