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STD86N3LH5 - Power MOSFET

General Description

This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology.

Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.

Table 1.

Key Features

  • Type STD86N3LH5.
  • VDSS 30 V RDS(on) max < 0.005 Ω ID 80 A 3 1 RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses DPAK.

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STD86N3LH5 www.datasheet4u.com N-channel 30 V, 0.0045 Ω , 80 A, DPAK STripFET™ V Power MOSFET Features Type STD86N3LH5 ■ ■ ■ ■ VDSS 30 V RDS(on) max < 0.005 Ω ID 80 A 3 1 RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses DPAK Application ■ Switching applications – Automotive Figure 1. Internal schematic diagram Description This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)*Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved. Table 1.