Datasheet Summary
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N-channel 30 V, 0.0045 Ω , 80 A, DPAK STripFET™ V Power MOSFET
Features
Type STD86N3LH5
- -
- -
VDSS 30 V
RDS(on) max < 0.005 Ω
ID 80 A
3 1
RDS(on)
- Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses
DPAK
Application
- Switching applications
- Automotive Figure 1. Internal schematic diagram
Description
This product utilizes the 5th generation of design rules of ST’s proprietary STripFET™ technology. The lowest available RDS(on)- Qg, in the standard packages, makes this device suitable for the most demanding DC-DC converter applications, where high power density is to be achieved.
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