Datasheet Summary
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Dual NPN high voltage transistors in a single package
Preliminary data
Features
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Low VCE(sat) Simplified circuit design Reduced ponent count Fast switching speed
8 4 1
Applications
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DIP-8
Description
The device is a dual NPN high voltage power transistor manufactured using multi-epitaxial planar technology. It is housed in dual-island DIP8 package with separated terminals to provide a high degree of assembly flexibility.
Figure 1.
Internal schematic diagram
Table 1.
Device summary
Marking D845DN40 Package DIP-8 Packaging Tube
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