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STD845DN40 - Dual NPN transistors

General Description

The device is a dual NPN high voltage power transistor manufactured using multi-epitaxial planar technology.

It is housed in dual-island DIP8 package with separated terminals to provide a high degree of assembly flexibility.

Figure 1.

Key Features

  • Low VCE(sat) Simplified circuit design Reduced component count Fast switching speed 8 4 1.

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www.DataSheet4U.com STD845DN40 Dual NPN high voltage transistors in a single package Preliminary data Features ■ ■ ■ ■ Low VCE(sat) Simplified circuit design Reduced component count Fast switching speed 8 4 1 Applications ■ ■ Compact fluorescent lamp (CFL) 220 V mains Electronic ballast for fluorescent lighting DIP-8 Description The device is a dual NPN high voltage power transistor manufactured using multi-epitaxial planar technology. It is housed in dual-island DIP8 package with separated terminals to provide a high degree of assembly flexibility. Figure 1. Internal schematic diagram Table 1. Device summary Marking D845DN40 Package DIP-8 Packaging Tube Order code STD845DN40 March 2010 Doc ID 17211 Rev 1 1/10 www.st.